 הוצגו לאחרונה מצעי GaN איכותיים - High Quality GaN wafers -
לדוגמה, מצעים (in Bulk or as Wafers) עם -
FWHM=20 arcsek and
dislocation density 1 X 10^4cm-2
Bulk-GaN wafers משמשים לייצור LED, laser diodes, transistors..
יתרונות
( Low dislocation density (10-4cm-2
Flexibility in material choice
( High electron concentration (1019 cm3
High transparency
Homogeneity
Flatness
( Flexibility in wafer preparation (size, shape, polishing
Ultra high resistivity (semi insulating , up to 1011Ω•cm
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